Modeling of Modern MOSFETs with Strain
نویسندگان
چکیده
We review modeling techniques to evaluate strain induced performance enhancement of modern MOSFETs. While p-channel MOSFETs were intensively studied and are quite well understood, electron transport in n-type strained structures received surprisingly little attention. A rigorous analysis of the subband structure in inversion layers and thin silicon films under stress is performed. Calculated subband effective masses strongly depend on shear strain and film thickness. A decrease of the transport effective mass under tensile stress in [110] direction and an additional splitting between the unprimed subbands with the same quantum number guarantees a mobility enhancement even in ultra-thin (001) silicon films. This increase of mobility and drive current combined with the improved channel control makes multi-gate MOSFETs based on thin films or silicon fins preeminent candidates for the 16nm technology node and beyond.
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